| PART |
Description |
Maker |
| N82S185 |
8K-Bit TTL Bipolar PROM
|
NXP
Philips Semiconductors
|
| AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
1M X 16 FLASH 3V PROM, 90 ns, PDSO48
1M X 16 FLASH 3V PROM, 90 ns, PDSO44
1M X 16 FLASH 3V PROM, 70 ns, PDSO48
1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| UT28F256 UT28F256T-45UPX 5962F9689103QXA 5962F9689 |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
320 x 240 pixel format, LED or CFL Backlight
Recalibration Service for 2120B B&K Oscilloscope
Oscilloscope; Scope Type:Analog; Scope Bandwidth:30 MHz; Scope Channels:2 Scope; Calibrated:No; Rise Time:12ns; Sensitivity:5 mV/div to 5 V/div; Accuracy: /- 3 %; Resistance:1Mohm
Recalibration Service for 2125A B&K Oscilloscope
Radiation-Hardened 32K x 8 PROM 辐射加固32K的8胎膜早破
Recalibration Service for 2120B B&K Oscilloscope 辐射加固32K的8胎膜早破
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-Hardened 32K x 8 PROM
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
NEC, Corp.
Aeroflex Circuit Techno...
|
| R29771 R29683 |
Standard 4096 x 8 Bit PROM(标准096 x 8 PROM)
Standard 2048 x 8 Bit PROM(标准048 x 8 PROM) 标准048 × 8位可编程（标准的2048 × 8位可编程
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MAX5013 MAX5013AEPI MAX5013AEQI MAX5013BEPI MAX501 |
12-Bit 100Msps TTL DAC
12-Bit / 100Msps TTL DAC
12-Bit, 100Msps TTL DAC PARALLEL, WORD INPUT LOADING, 0.013 us SETTLING TIME, 12-BIT DAC, PQCC28
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| MBM29LV160BE70TN MBM29LV160BE70TR MBM29LV160BE70PB |
16M (2M X 8/1M X 16) BIT 2M X 8 FLASH 3V PROM, 120 ns, PBGA48
KPT 23C 22#20 1#16 SKT PLUG 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M (2M X 8/1M X 16) BIT 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Central Semiconductor, Corp.
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| HN25084 |
2K x 8 TTL PROM Memory
|
Hitachi Semiconductor
|
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
| AM27S29 AM27S29ADC AM27S29AJC AM27S29A AM27S29SA A |
4096 Bit Bipolar PROM
4,096-Bit (512x8) Bipolar PROM
|
http://
AMD[Advanced Micro Devices]
|
| 5962F9687301QXA 5962F9687301QXX 5962F9687301QYA 59 |
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. Total dose 5E5rads(Si)
|
Aeroflex Circuit Technology
|
| M37736EHB M37736EHBGS M37736EHBXXXGP M37736MHBXXXG |
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
PROM VERSION OF M37736MHBXXXGP(MICROCOMPUTERS)
PROM VERSION OF M37736EHBXXXGP
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
|
